胡剑书;焦清介;
HU Jian-shu1,JIAO Qing-jie2 (Chinese People Liberation Army Military Deputy Station of Chongqing Gas Compressor Factory,Chongqing 400060,China;2.State Key of Explosion Science and Technology of BIT,Beijing 100081,China)

• 1:中国人民解放军驻重庆气体压缩机厂军事代表室
• 2:北京理工大学爆炸科学与技术国家重点实验室 重庆400060
• 3:北京100081

摘要(Abstract)：

半导体桥火工品是取代桥丝的理想火工品。本文根据半导体桥的点火特性,应用电能转化为热能、热传导和炸药的热爆炸三个方面的理论,建立了在电容放电和直流输入两种方式下半导体桥桥体的升温特性方程;并通过计算机运算绘图,验证了方程基本符合理论要求。文章最后指出升温方程需加入修正系数来进一步完善。
Semiconductor-bridge(SCB) is one of the best fire devices for replacement of the use of bridge-wire.Based on firing character of semiconductor bridge(SCB),the author built a temperature rising equation versus capacitance discharge and direct current input respectively by the use of the theories of energy transformation from electricity to heat,heat exchange and heat explosion.Computerization of the equation roughly proved its accordance with theory.As a conclusion,the author suggested that correcting coefficient should be considered so as to perfect the equation.

关键词(KeyWords)： 半导体桥;升温方程;桥温
Semiconductor bridge(SCB);Temperature rising equation;Bridge temperature

Abstract:

Keywords:

基金项目(Foundation):

作者(Authors): 胡剑书;焦清介;
HU Jian-shu1,JIAO Qing-jie2 (Chinese People Liberation Army Military Deputy Station of Chongqing Gas Compressor Factory,Chongqing 400060,China;2.State Key of Explosion Science and Technology of BIT,Beijing 100081,China)

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