胡剑书;焦清介;
HU Jian-shu,JIAO Qing-jie(State Key Laboratory of Explosion Science and Technology of BIT,Beijing University of Technology,Beijing 100081,China)

• 1:北京理工大学爆炸科学与技术国家重点实验室
• 2:北京理工大学爆炸科学与技术国家重点实验室 北京100081
• 3:北京100081

摘要(Abstract)：

介绍了半导体桥(SCB)发火器件的工作机理。通过对恒流作用下V型半导体桥的电热特性建立数学模型,得出了SCB的夹角越小、发火电流越大则发火时间越快的关系。但是,由于夹角受到半导体桥临界能量的影响,存在一个最小值,也是V型角的最佳角度。本文同时给出了一个计算升温时间的公式。
The working mechanism of semiconductor bridge is introduced in this paper.The authors establish the mathematic model of galvanothermy character of the semiconductor bridge by inputing invariable current.The conclusion is showed that the smaller the angle of V type of the semiconductor bridge is,the greater of firing current is,and so the faster of the speed of firing time; but,because of the influence of critical energy of semiconductor bridge,the minimum angle can be proved to exist,which is also the optimal angle.At last the formula about calculating the time of temperature rising is proposed in the paper.

关键词(KeyWords)： 半导体桥;电热性质;V型角;发火时间
Semiconductor bridge;Galvanothermy character;Angle of V type;Firing time

Abstract:

Keywords:

基金项目(Foundation):

作者(Authors): 胡剑书;焦清介;
HU Jian-shu,JIAO Qing-jie(State Key Laboratory of Explosion Science and Technology of BIT,Beijing University of Technology,Beijing 100081,China)

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